题目： Novel Materials and Devices for Beyond Silicon Electronics
硅电子技术的新材料和设备
讲座时间： 2015年12月10日上午9:00-11:00
讲座地点：机械馆 2329
主讲人简介：
Wenfeng Zhang received the B.Eng. degree in Material Science and Engineering from Southwest Jiaotong University in 2003, M.Sc degree in Material Science and Engineering from University of science and Technology of Beijing in 2006, and the Ph.D. degree in Physics and materials science from City University of Hong Kong in 2009. Between 2009 and 2014, He worked as a postdoctoral research associate, JST-CREST project researcher and JSPS foreigner research fellow at the Center Of Super-Diamond and Advanced Films (COSDAF) in CityU, Department of materials engineering in Tokyo University (Japan), respectively. Currently, he is an associate professor in the department of materials science and engineering in Huazhong University of Science and Technology. His current research focuses on the novel materials and devices for the post-silicon electronics, electronic packaging etc.
报告内容：
Successful shrinking of silicon-based electronics has always been the major driving force for the microelectronics industry in the past 50 years. However, as silicon transistor have shrunk to the limit of performance improvements, research attention in the semiconductor field has turned to seek for new channel materials such as Ш-V, Ge, graphene, carbon nanotubes and semiconductor nanowires. In this talk, I will introduce our work about Ge Channel and metal oxide nanowire channel electronics devices.